Lanthanide impurity level location in GaN, AlN, and ZnO
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چکیده
A method that has proven succesful in locating the energy levels of divalent and trivalent lanthanide ions (Ce, Pr,..., Eu,...Yb, Lu) in wide band gap inorganic compounds like YPO4 and CaF2 is applied to locate lanthanide levels in the wideband semiconductors GaN, AlN, their solid solutions AlxGa1-xN, and ZnO. The proposed schemes provide a description of relevant optical and luminescence properties of these lanthanide doped semiconductors. Especially, the relation between thermal quenching of Tb emission and the location of the energy levels is explained.
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تاریخ انتشار 2007